The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted Si
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference27 articles.
1. Implanted Source/Drain Junctions for Polysilicon Gate Technologies
2. The Concentration Profiles of Phosphorus, Arsenic and Recoiled Oxygen Atoms in Si by Ion Implantation into SiO2–Si
3. The effects of the recoil-implanted oxygen in Si on the electrical activation of As after through-oxide implantation
4. Activation analytical investigation of contamination and cross-contamination in ion implantation
5. Arsenic Ion‐Implanted Shallow Junction
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4. The Influence of Medium Dose Ion Implantation on the Reliability of Thin Gate Oxide;Journal of The Electrochemical Society;1995-05-01
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