Implanted Source/Drain Junctions for Polysilicon Gate Technologies-Reference-Cited by-同舟云学术

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Implanted Source/Drain Junctions for Polysilicon Gate Technologies

Published:1980-05 Issue:3 Volume:24 Page:362-369
ISSN:0018-8646
Container-title:IBM Journal of Research and Development
language:
Short-container-title:IBM J. Res. & Dev.

Author:

Geipel H. J.,Shasteen R. B.

Publisher

IBM

Subject

General Computer Science

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effects of doping impurities and substrate crystallin on the formation of nickel suicides on silicon at 200–280° C;Journal of Electronic Materials;1988-01

2. Structures and Fabrication of Metal-Oxide-Silicon Field-Effect Transistor;Handbook of Advanced Semiconductor Technology and Computer Systems;1988

3. Effects of implantation impurities and substrate crystallinity on the formation of NiSi2on silicon at 200–280 °C;Journal of Applied Physics;1987-10

4. A new CMOS IC structure and its characterization;Microelectronics Reliability;1985-01

5. Metallic Impurities and Dopant Cross-Contamination Effects in Ion Implanted Surfaces;MRS Proceedings;1985

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