Effects of implantation impurities and substrate crystallinity on the formation of NiSi2on silicon at 200–280 °C
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339408
Reference12 articles.
1. Epitaxial growth of NiSi2on ion‐implanted silicon at 250–280 °C
2. Implanted Source/Drain Junctions for Polysilicon Gate Technologies
3. Optimization of BF2+implanted and rapidly annealed junctions in silicon
4. Transmission electron microscopy of cross sections of large scale integrated circuits
5. Sheet resistivity and transmission electron microscope investigations of BF+2‐implanted silicon
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