High-fluence Ga-implanted silicon—The effect of annealing and cover layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4887450
Reference38 articles.
1. Etch Rate Retardation of Ga[sup +]-Ion Beam-Irradiated Silicon
2. Mechanisms of boron diffusion in silicon and germanium
3. The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted Si
4. Effect of near-surface band bending on dopant profiles in ion-implanted silicon
5. Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation
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