AES analysis of nitridation of Si(100) by 2–10 keV N+2 ion beams-Reference-Cited by-同舟云学术

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AES analysis of nitridation of Si(100) by 2–10 keV N+2 ion beams

Published:1997-06 Issue:2 Volume:115 Page:166-173
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Pan J.S.,Wee A.T.S.,Huan C.H.A.,Tan H.S.,Tan K.L.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. The preparation, characterization and applications of silicon nitride thin films

2. Amorphous silicon‐silicon nitride thin‐film transistors

3. Properties of epitaxial silicon layers on buried silicon nitride produced by ion implantation

4. Synthesis of silicon nitride and silicon oxide films by ion-assisted deposition

5. Reaction of Si(100) with NH3: Rate-Limiting Steps and Reactivity Enhancement via Electronic Excitation

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitrogen ion induced nitridation of Si(111) surface: Energy and fluence dependence;Materials Chemistry and Physics;2014-06

2. Annealing of Si surface region modified by plasma immersion implantation of nitrogen;Journal of Physics: Conference Series;2012-03-29

3. The effect of constraints on the initial steps of adsorption of nitrogen atoms on the silicon surface as modeled by the cluster [Si9H12+N];Chemical Physics;2006-02

4. Investigation of plasma oxynitridation of Si(001) by NH3/N2O/Ar remote plasma processing;Surface and Coatings Technology;2005-04

5. Control of nitrogen depth profile in ultrathin oxynitride films formed by pulse-time-modulated nitrogen beams;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-03

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