Reaction of Si(100) with NH3: Rate-Limiting Steps and Reactivity Enhancement via Electronic Excitation
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.57.1185/fulltext
Reference19 articles.
1. Transport processes during the growth of oxide films at elevated temperature
2. Thermal Nitridation of Si and SiO/sub 2/ for VLSI
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