In situ characterization of the nitridation of AIII–BV semiconductor surfaces by means of X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

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In situ characterization of the nitridation of AIII–BV semiconductor surfaces by means of X-ray photoelectron spectroscopy

Published:2001-07 Issue:1-4 Volume:179 Page:196-202
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Hecht J.-D,Frost F,Chassé T,Hirsch D,Neumann H,Schindler A,Bigl F

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference26 articles.

1. Nitridation process of sapphire substrate surface and its effect on the growth of GaN

2. Raman study of the nitrided GaAs thin layers

3. Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal‐insulator‐semiconductor devices

4. Preconditioning of c-plane sapphire for GaN molecular beam epitaxy by electron cyclotron resonance plasma nitridation

5. Plasma cleaning and nitridation of sapphire substrates for AlxGa1−xN epitaxy as studied by x-ray photoelectron diffraction

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1. In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy;Surface and Interface Analysis;2020-06-26

2. The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE;Vacuum;2020-02

3. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT;ECS Journal of Solid State Science and Technology;2018

4. Electrodeposition of gallium in the presence of NH4Cl in an ionic liquid: hints for GaN formation;Chemical Communications;2014-07-21

5. Low-temperature CVD of iron, cobalt, and nickel nitride thin films from bis[di(tert-butyl)amido]metal(II) precursors and ammonia;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-03

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