Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal‐insulator‐semiconductor devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331380
Reference18 articles.
1. InP/SiO2MIS structure
2. n-channel inversion-mode InP m.i.s.f.e.t.
3. InP–SiO2 m.i.s. structure with reduced interface state density near conduction band
4. Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
5. Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
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