Wide-Band Gap Binary Semiconductor P<sub>3</sub>N<sub>5</sub> with Highly Anisotropic Optical Linearity and Nonlinearity-Reference-Cited by-同舟云学术

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Wide-Band Gap Binary Semiconductor P₃N₅ with Highly Anisotropic Optical Linearity and Nonlinearity

Published:2024-03-08 Issue:11 Volume:63 Page:5220-5226
ISSN:0020-1669
Container-title:Inorganic Chemistry
language:en
Short-container-title:Inorg. Chem.

Author:

Li Shihang¹²,Yan Xiaolan³,Lin Zheshuai¹^ORCID,Kang Lei¹^ORCID

Affiliation:

1. Functional Crystals Lab, Key Laboratory of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

3. School of Microelectronics, Fudan University, Shanghai 200433, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.inorgchem.4c00261

Reference44 articles.

1. Fundamentals of Silicon Carbide Technology

2. GaN in different dimensionalities: Properties, synthesis, and applications

3. A review of Ga2O3materials, processing, and devices

4. SiC materials-progress, status, and potential roadblocks

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