InP–SiO2 m.i.s. structure with reduced interface state density near conduction band
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19780037?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Sze, S.M.: Physics of semiconductor devices, (Wiley 1969), p. 429–439
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