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The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

  • Published:2020-02 Issue: Volume:172 Page:109097
  • ISSN:0042-207X
  • Container-title:Vacuum
  • language:en
  • Short-container-title:Vacuum

Author:

Naceur Syrine,Choubani Mohsen,Smiri Badreddine,Maaref Hassen,Monier Guillaume,Robert-Goumet Christine,Sfaxi Larbi,Gruzza Bernard,Mghaieth Ridha

Funder

University of Monastir, Laboratory of Micro-Optoelectronic and Nanostructures, Department of Physics, Faculty of Sciences Monastir, Tunisia

Clermont University

University of Blaise Pascal, Institute of Pascal

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference38 articles.

1. Laser-induced InAs/GaAs quantum dot intermixing;Dubowski;Appl. Phys. Lett.,2000

2. Voltage recovery in charged InAs/GaAs quantum dot solar cells;Lam;Nano Energy,2014

3. Growth of BGaAs layers on GaAs substrates by metal-organic vapor-phase epitaxy;Pryakhin;Semiconductors,2005

4. Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD;Hamila;J. Alloy. Comp.,2010

5. International Conference on Indium Phosphide and Related Materials;Kikuno,2005

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