Electronic properties of sulfur passivated undoped-n+ type GaAs surface studied by photoreflectance-Reference-Cited by-同舟云学术

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Electronic properties of sulfur passivated undoped-n+ type GaAs surface studied by photoreflectance

Published:2003-09 Issue:1-4 Volume:218 Page:211-215
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Jin Peng,Pan S.H.,Li Y.G.,Zhang C.Z.,Wang Z.G.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference15 articles.

1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

2. X‐ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces

3. Sulfide-passivated GaAs(001). I. Chemistry analysis by photoemission and reflectance anisotropy spectroscopies

4. Sulfide-passivated GaAs (001). II. Electronic properties

5. Barrier height enhancement of Ag/n-GaAs and Ag/n-InP Schottky diodes prepared by P2S5/(NH4)2Sx and HF treatments

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE;Journal of Crystal Growth;2017-11

2. Photoreflectance and Raman Study of Surface Electric States on AlGaAs/GaAs Heterostructures;Journal of Spectroscopy;2016

3. Characterization of Nano-porous TiO2Film Prepared by Sol-gel Process and Its Application to Dye-sensitized Solar Cell;Journal of the Chinese Chemical Society;2012-10-04

4. Surface Passivation of p-GaTe Layered Crystals for Improved p-GaTe/n-InSe Heterojunction Solar Cells;MRS Proceedings;2010

5. A complex Fourier transformation study of the contactless electroreflectance of an undoped-n+GaAs structure;Semiconductor Science and Technology;2006-04-25

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