In-situ real-time analysis on strain relaxation process in GaN growth on sapphire by RF-MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. GaN Growth Using GaN Buffer Layer
3. Growth of high mobility GaN by ammonia-molecular beam epitaxy
4. Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers
5. MBE Growth of (In)GaN for LED Applications
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1. In-situ ellipsometric study on composition-dependent short-wave HgCdTe in the process of molecular beam epitaxy growth;Earth and Space: From Infrared to Terahertz (ESIT 2022);2023-01-31
2. Effects of plasma power on material and optical quality of GaN nanorods grown by plasma-assisted molecular beam epitaxy;Applied Physics Express;2014-10-20
3. InN-Based Low Dimensional Structures;Indium Nitride and Related Alloys;2009-08-18
4. Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs;Journal of Crystal Growth;2009-03
5. Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
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