Advances in InN epitaxy and its material control by MBE towards novel InN-based QWs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Unusual properties of the fundamental band gap of InN
3. Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy
4. Molecular beam epitaxy growth of GaN, AlN and InN
5. Optical properties and electronic structure of InN and In-rich group III-nitride alloys
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1. Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions;Journal of Applied Physics;2024-04-01
2. Ga(X)N/Si nanoarchitecture: An emerging semiconductor platform for sunlight-powered water splitting toward hydrogen;Frontiers in Energy;2023-06-20
3. Van der Waals Epitaxy of Indium Nitride Crystals on Graphitic Structure by RF-MBE;Journal of the Society of Materials Science, Japan;2020-10-15
4. Optical properties of InN/GaN quantum dot superlattice by changing dot size and interdot spacing;Results in Physics;2019-06
5. Peculiar Photoluminescence Properties of Strained InxGa1–xN/GaN Multiple-Quantum Wells: Experiment and Theory;Science of Advanced Materials;2018-07-01
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