Effects of plasma power on material and optical quality of GaN nanorods grown by plasma-assisted molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/7/i=11/a=115502/pdf
Reference32 articles.
1. GaN based nanorods for solid state lighting
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. III–nitrides: Growth, characterization, and properties
4. In-situ real-time analysis on strain relaxation process in GaN growth on sapphire by RF-MBE
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1. Modulated 3D light absorption profile in GaN nanorod arrays;Current Applied Physics;2021-02
2. The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE;Optical Materials;2016-04
3. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy;Journal of Crystal Growth;2015-10
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