Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy

Published:2002-08 Issue:1 Volume:243 Page:103-107
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kobayashi Yasuyuki,Perez-Solorzano V,Off J,Kuhn B,Gräbeldinger H,Schweizer Heinz,Scholz Ferdinand

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode

2. T. Mukai, S. Nagahama, T. Yanamoto, M. Sano, Book of Abstracts, Fourth International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2002), Cordoba, Spain, WeA1.

3. Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

4. Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

5. Critical layer thickness for self-assembled InAs islands on GaAs

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1. Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n⁺ (In)GaN Source/Drain Layers for Radio Frequency Transistors;physica status solidi (a);2024-06-02

2. Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN;Materials;2020-01-04

3. Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods;Nanoscale;2016

4. GaN tubes with coaxial non- and semipolar GaInN quantum wells;physica status solidi (c);2014-02

5. Growth mode transition and relaxation of thin InGaN layers on GaN (0001);Journal of Crystal Growth;2013-06

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