Growth mode transition and relaxation of thin InGaN layers on GaN (0001)-Reference-Cited by-同舟云学术

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Growth mode transition and relaxation of thin InGaN layers on GaN (0001)

Published:2013-06 Issue: Volume:372 Page:65-72
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pristovsek Markus,Kadir Abdul,Meissner Christian,Schwaner Tilman,Leyer Martin,Stellmach Joachim,Kneissl Michael,Ivaldi Francesco,Kret Sławomir

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference44 articles.

1. Volmer-Weber growth mode of InN quantum dots on GaN by MOVPE

2. Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal–Organic Vapour Phase Epitaxy

3. Real time control of InxGa1−xN molecular beam epitaxy growth

4. Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

5. Self-assembled InGaN quantum dots grown by molecular-beam epitaxy

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