High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer-Reference-Cited by-同舟云学术

High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer

Published:2003-02 Issue: Volume:248 Page:552-555
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chowdhury Uttiya,Wong Michael M.,Collins Charles J.,Yang Bo,Denyszyn Jonathan C.,Campbell Joe C.,Dupuis Russell D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. R.D. Dupuis, J.C. Campbell, in: F. Ren, J. Zolper (Eds.), Wide Energy Band gap Electronic Devices, World Scientific Publishing, Singapore, 2002, pp. 98–100.

2. Low-noise photodetectors based on heterojunctions of AlGaN–GaN

3. Back illuminated AlGaN solar-blind photodetectors

4. Doping of AlxGa1−xN

5. Solar-blind AlGaN-based inverted heterostructure photodiodes

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