Optical and Electrical Properties of a Metal-Semiconductor-Metal Material Based on Al-Doped ZnO Films for Use as UV Photodetectors
Author:
Publisher
Korean Physical Society
Subject
General Physics and Astronomy
Link
http://link.springer.com/content/pdf/10.3938/jkps.74.1011.pdf
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Toward Industrial Production of a High-Performance Self-Powered Ultraviolet Photodetector Using Nanoporous Al-Doped ZnO Thin Films;ACS Omega;2023-09-15
2. Defect engineering of hexagonal boron nitride nanosheets via hydrogen plasma irradiation;Applied Surface Science;2022-08
3. Enhancement of optoelectronic properties of ZnO thin films by Al doping for photodetector applications;Superlattices and Microstructures;2021-03
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