Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors-Reference-Cited by-同舟云学术

Visible-blind and solar-blind detection induced by defects in AlGaN high electron mobility transistors

Published:2018-03-21 Issue:11 Volume:123 Page:114502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Armstrong Andrew M.¹^ORCID,Klein Brianna¹,Allerman Andrew A.¹,Douglas Erica A.¹,Baca Albert G.¹,Crawford Mary H.¹,Pickrell Greg W.¹^ORCID,Sanchez Carlos A.¹

Affiliation:

1. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

DOE | Laboratory Directed Research and Development

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4997605

Reference31 articles.

1. Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes

2. AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain

3. Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates

4. Deep UV photon-counting detectors and applications

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