Variations in critical coverage for InAs/GaAs quantum dot formation in bilayer structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
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1. Polarization-insensitive fiber-to-fiber gain of semiconductor optical amplifier using closely stacked InAs/GaAs quantum dots;Japanese Journal of Applied Physics;2020-02-17
2. Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots;Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors;2017-09-07
3. Strain Driven Shape Evolution of Stacked (In,Ga)N Quantum Disks Embedded in GaN Nanowires;Nano Letters;2017-07-27
4. From Basic Physical Properties of InAs/InP Quantum Dots to State-of-the-Art Lasers for 1.55 µm Optical Communications;Semiconductor Nanocrystals and Metal Nanoparticles;2016-08-17
5. Electron microscopy of quantum dots;Journal of Microscopy;2014-11-18
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