Growth of InSb on GaAs using InAlSb buffer layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Narrow-gap semiconductor magnetic-field sensors and applications
2. Growth of InSb on GaAs by metalorganic chemical vapor deposition
3. Uniform growth of InSb on GaAs in a rotating disk reactor by LP-MOVPE
4. Growth of high mobility InSb by metalorganic chemical vapor deposition
5. http://www.emcore.com/devices/pegasus.html.
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2. Metal organic vaper phase epitaxy growth of high-quality AlInSb using tritertiarybutylaluminum and tris(dimethylamino)antimony sources;Japanese Journal of Applied Physics;2020-02-17
3. High-Quality 100 nm Thick InSb Films Grown on GaAs(001) Substrates with an InxAl1–xSb Continuously Graded Buffer Layer;ACS Omega;2018-11-01
4. Effect of InSb/In 0.9 Al 0.1 Sb superlattice buffer layer on the structural and electronic properties of InSb films;Journal of Crystal Growth;2017-07
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