Growth and Characterization of InSb Thin Films on GaAs (001) without Any Buffer Layers by MBE
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/34/7/076105/pdf
Reference37 articles.
1. High-Sensitivity Temperature Measurement With Miniaturized InSb Mid-IR Sensor
2. X‐ray determination of dislocation density in epitaxial ZnCdTe
3. Molecular beam epitaxial growth of AlSb/InAsSb heterostructures
4. Theoretical study of transport property in InAsSb quantum well heterostructures
5. Self-consistent analysis of InAsSb quantum-well heterostructures
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1. van der Waals epitaxy and defect-charge manipulation of InSb islands on graphene-covered SiC(0001);Physical Review Materials;2022-08-11
2. Intrinsic point defects and the n - and p -type dopability of the narrow gap semiconductors GaSb and InSb;Physical Review B;2019-07-25
3. High-Quality InSb Grown on Semi-Insulting GaAs Substrates by Metalorganic Chemical Vapor Deposition for Hall Sensor Application;Chinese Physics Letters;2019-01
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