Effect of InSb/In 0.9 Al 0.1 Sb superlattice buffer layer on the structural and electronic properties of InSb films-Reference-Cited by-同舟云学术

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Effect of InSb/In 0.9 Al 0.1 Sb superlattice buffer layer on the structural and electronic properties of InSb films

Published:2017-07 Issue: Volume:470 Page:1-7
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhao Xiaomeng^ORCID,Zhang Yang,Guan Min,Cui Lijie,Wang Baoqiang,Zhu Zhanping,Zeng Yiping

Funder

Youth Innovation Promotion Association

Chinese Academy of Sciences

National Natural Science Foundation of China

Beijing Natural Science Foundation

Beijing Nova Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. High-sensitivity temperature measurement with miniaturized InSb Mid-IR sensor;Camargo;IEEE Sens. J.,2007

2. InSb photodiodes for monolithic active focal plane arrays on GaAs substrates;Pusino;IEEE Trans. Electron Devices,2016

3. Two-dimensional coordinate-sensitive photodetectors based on (p)InSb-(n)CdTe heterojunction;Margaryan;J. Contemp. Phys.-Armenian Acad. Sci.,2016

4. Joint FDTD-optical/FEM-electrical numerical simulation of reflection-type subwavelength-microstructure InSb infrared focal-plane arrays;He;J. Electron. Mater.,2016

5. New indium antimonide-based IR detectors surpass previous limitations;Rittenberg;Photon. Spectra,2016

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