p-Type doping of GaAs(001) layers grown by MBE using silicon as a dopant
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
2. Intentional ρ-type doping by carbon in metalorganic MBE of GaAs
3. A comparison of atomic carbon versus beryllium acceptor doping in GaAs grown by molecular beam epitaxy
4. Carbon doping in molecular beam epitaxial (MBE) growth of GaAs using neopentane as a novel carbon source
5. Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures
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