Probing the silane, disilane and germane adsorption kinetics on the silicon (001) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. An atomically resolved scanning tunneling microscopy study of the thermal decomposition of disilane on Si(001)
2. Scanning-tunneling-microscopy studies of disilane adsorption and pyrolytic growth on Si(100)-(2x1)
3. Gas-source growth of group IV semiconductors: I. Si(001) nucleation mechanisms
4. Role of hydrogen desorption in the chemical-vapor deposition of Si(100) epitaxial films using disilane
5. Scanning tunnelling microscopy of the interaction of hydrogen with silicon surfaces
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1. Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si0.5Ge0.5(001)-2 × 1 Surfaces;The Journal of Physical Chemistry C;2024-07-17
2. Theoretical Analysis of Si2H6 Adsorption on Hydrogenated Silicon Surfaces for Fast Deposition Using Intermediate Pressure SiH4 Capacitively Coupled Plasma;Coatings;2021-08-29
3. Analysis of surface adsorption kinetics of SiH4 and Si2H6 for deposition of a hydrogenated silicon thin film using intermediate pressure SiH4 plasmas;Applied Surface Science;2019-12
4. Kinetics of the decomposition of disilane on a silicon growth surface into two non-identical radicals;Russian Journal of Physical Chemistry B;2016-03
5. Kinetics of surface pyrolysis of a silane–germane gas mixture under conditions of epitaxial film deposition of Si1–x Ge x solid solutions;Russian Journal of General Chemistry;2015-12
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