Gold films epitaxially grown by diffusion at the 3C–SiC/Si interface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Diffusion of gold in 3C-SiC epitaxially grown on Si Structural characterization
2. Infrared reflectance evaluation of chemically vapor deposited β‐SiC films grown on Si substrates
3. A mechanism for the formation of twins in evaporated face-centred cubic metal films
4. The effect of heat treatment on Au Schottky contacts on β-SiC
5. Transmission electron microscopy of process-induced defects in β-SiC thin films
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