Atomistic investigations of misfit dislocation for Pt/SiC(111) interface fracture
Author:
Publisher
IOP Publishing
Subject
Computer Science Applications,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Modeling and Simulation
Reference31 articles.
1. Gold films epitaxially grown by diffusion at the 3C–SiC/Si interface
2. Anin situ HVEM study of dislocation generation at Al/SiC interfaces in metal matrix composites
3. Atomistic study of misfit dislocation in metal/SiC(111) interfaces
4. Molecular view of the interfacial adhesion in aluminum‐silicon carbide metal‐matrix composites
5. Ab initiocalculations of the β-SiC(001)/Ti interface
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atomistic simulation of martensitic transformations induced by deformation of α-Fe single crystal during the mode-I fracture;Journal of Materials Science;2020-10-23
2. Microstructure and wear resistance of (Nb,Ti)C carbide reinforced Fe matrix coating with different Ti contents and interfacial properties of (Nb,Ti)C/α-Fe;Applied Surface Science;2019-11
3. Atomic Study of Semi-Coherent Interfacial Structure at Fe[110]/TMC[001] (TM=V, Nb and Ta) Interfaces;Advanced Materials Research;2014-12
4. Atomic study of fracture progress of Fe[110]/TMC[100] (TM = Ti, Zr and Hf) semi-coherent interfaces;Modern Physics Letters B;2014-09-20
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