Effect of AlN buffer layer deposition conditions on the properties of GaN layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
2. Present status of InGaN/GaN/AlGaN-based laser diodes
3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
4. GaN Growth Using GaN Buffer Layer
5. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
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