Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer
Author:
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/10/3/252/pdf
Reference24 articles.
1. Polarization-dependent optical characteristics of violet InGaN laser diodes
2. Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes
3. Growth and characterization of N-polar InGaN∕GaN multiquantum wells
4. Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
5. Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy
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1. N-polar GaN evolution on nominally on-axis c-plane sapphire by MOCVD part-I: Growth optimization;Materials Science and Engineering: B;2022-12
2. The importance of nucleation layer for the GaN N-face purity on the annealed Al2O3 layers deposited by atomic layer deposition;Materials Science and Engineering: B;2022-10
3. N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation;Materials;2022-04-21
4. On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC;Journal of Applied Physics;2022-02-07
5. Reduction of hexagonal defects in N-polar AlGaN epitaxial layers grown with reformed pulsed-flow technology;Materials Science in Semiconductor Processing;2022-02
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