Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

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Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition

Published:2009-07-21 Issue:7 Volume:48 Page:071003
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Masui Hisashi,Keller Stacia,Fellows Natalie,Fichtenbaum Nicholas A.,Furukawa Motoko,Nakamura Shuji,Mishra Umesh K.,DenBaars Steven P.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference37 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. Nonpolar and Semipolar Orientations: Material Growth and Properties

3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

4. Playing with Polarity

5. N-polar GaN∕AlGaN∕GaN high electron mobility transistors

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3. High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology;Crystals;2024-03-04

4. Bidirectional light-emitting diode as a visible light source driven by alternating current;Nature Communications;2023-11-20

5. Growth of N-Polar (0001) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire;Crystals;2023-07-07

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