Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Uniformity enhancement of the self-organized InAs quantum dots
2. Vertically Aligned and Electronically Coupled Growth Induced InAs Islands in GaAs
3. Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
4. Size control of self-assembled InP/GaInP quantum islands
5. Effects of growth interruption on self-assembled InAs/GaAs islands
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1. Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping;AIP Advances;2020-04-01
2. Effect of Si Doping in Self-Assembled InAs Quantum Dots on Infrared Photodetector Properties;Korean Journal of Materials Research;2019-09-30
3. Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells;International Journal of Photoenergy;2018
4. Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application;Semiconductor Science and Technology;2015-06-16
5. Si delta doping inside InAs/GaAs quantum dots with different doping densities;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-07
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