Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping-Reference-Cited by-同舟云学术

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Enhanced performance of InAs/GaAs quantum dot superluminescent diodes by direct Si-doping

Published:2020-04-01 Issue:4 Volume:10 Page:045202
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wang Hong¹²,Lv Zun-Ren¹²,Zhang Zhong-Kai¹²,Ding Yun-Yun¹²,Wang Hao-Miao¹²,Yang Xiao-Guang¹²,Yang Tao¹²^ORCID

Affiliation:

1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5141160

Reference21 articles.

1. Effects of Modulation P-Doping on Thermal Stability of InAs/GaAs Quantum Dot Superluminescent Diodes

2. Optical Coherence Tomography

3. An overview of fiber-optic gyroscopes

4. Fiber-to-the-Home Services Based on Wavelength-Division-Multiplexing Passive Optical Network

5. Gas-phase broadband spectroscopy using active sources: progress, status, and applications [Invited]

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-coherence semiconductor light sources: devices and applications;npj Nanophotonics;2024-06-03

2. Continuous-wave operation of Si-based 1.31 μm InAs/GaAs quantum-dot laser grown by molecular beam epitaxy;Physica Scripta;2023-07-21

3. Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB;Chinese Physics B;2022-09-01

4. Significantly improved performances of 1.3 μm InAs/GaAs QD laser by spatially separated dual-doping;Applied Physics Letters;2022-07-11

5. Improved linewidth enhancement factor of 1.3-µm InAs/GaAs quantum dot lasers by direct Si doping;AIP Advances;2021-05-01

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