Incorporation mechanism of dopant phosphorus in the Si growth using Si2H6 and PH3
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Gas source MBE growth of device materials
2. B‐doped Si(001) grown by gas‐source molecular‐beam epitaxy from Si2H6and B2H6:B incorporation and electrical properties
3. High doping of phosphorus in Si using gas source molecular beam epitaxy
4. Phosphorus gas doping in gas source silicon-MBE
5. Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture
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1. NMOS SiP Epitaxy Process - Optimizing Facet Growth;ECS Transactions;2013-03-15
2. Characteristics of in-situ phosphorus-doped silicon selective epitaxial growth at atmospheric pressure;Journal of Crystal Growth;2008-10
3. Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology;Journal of Applied Physics;2008-06-15
4. Investigation ofIn-situBoron-Doped Si Selective Epitaxial Growth by Comparison with Arsenic Doping;Japanese Journal of Applied Physics;2008-04-25
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