Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N2 and H2-Reference-Cited by-同舟云学术

Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N2 and H2

Published:2001-02 Issue:1-2 Volume:223 Page:21-28
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dauelsberg M.,Hardtdegen H.,Kadinski L.,Kaluza A.,Kaufmann P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. H. Hardtdegen, Proceedings of the 9th International Workshop on the Physics of Semiconductor Devices (IWPSD), Delhi, India, 1997, Vol. 1, 1998, p. 244.

2. (AlGa)As grown by low pressure metalorganic vapor phase epitaxy using a N2 carrier

3. In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere

4. C.R. Kleijn, Chemical vapor deposition processes, in: M. Meyyappan (Ed.), Computational Modelling in Semiconductor Processing, Artech House, Boston, 1995, pp. 97–230 (Chapter 4).

5. Decomposition mechanisms of trimethylgallium

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser-assisted local metal–organic vapor phase epitaxy;Review of Scientific Instruments;2022-11-01

2. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

3. Numerical design of Metal-Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth;Crystal Research and Technology;2016-11-16

4. Mathematical modeling and optimal design of an MOCVD reactor for GaAs film growth;Journal of the Taiwan Institute of Chemical Engineers;2014-01

5. GaP(100) and InP(100) Surfaces;GaP Heteroepitaxy on Si(100);2013