Numerical design of Metal-Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth-Reference-Cited by-同舟云学术

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Numerical design of Metal-Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth

Published:2016-11-16 Issue:12 Volume:51 Page:762-770
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Crystal Research and Technology

Author:

Skibinski J.¹,Caban P.²,Wejrzanowski T.¹,Oliver G.J.³,Kurzydlowski K.J.¹

Affiliation:

1. Warsaw University of Technology; Faculty of Materials Science and Engineering Woloska 141; 02507 Warsaw Poland

2. Institute of Electronic Materials Technology; Wolczynska 133 01919 Warsaw Poland

3. Cape Peninsula University of Technology; PO Box 1906 Bellville 7535 South Africa

Funder

European Regional Development Fund

Innovative Economy Operational Programme

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference26 articles.

1. Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

2. Graphene Epitaxy by Chemical Vapor Deposition on SiC

3. In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon

4. Advances in the modeling of MOVPE processes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analyzing industrial CVD reactors using a porous media approach;Chemical Engineering Journal;2021-07

2. Beware of symmetry breaking and periodic flow regimes in axisymmetric CVD reactor setups;Computers & Chemical Engineering;2019-05

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