Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H

Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC

Published:2011-01 Issue:1 Volume:315 Page:168-173
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Caban Piotr,Strupinski Wlodek,Szmidt Jan,Wojcik Marek,Gaca Jaroslaw,Kelekci Ozgur,Caliskan Deniz,Ozbay Ekmel

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

2. S-W. Kim, T. Yamada, K. Haga, M. Akatsu, T. Suzuki, Proc. Int, Workshop on nitride. semiconductors, in: Proceedings of the IPAP Conference Series 1, 2000, pp. 247–250.

3. The growth mechanism of GaN with different H2/N2 carrier gas ratios

4. The impact of nitridation and nucleation layer process conditions on morphology and electron transport in GaN epitaxial films

5. Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC

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