In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere

Author:

Hardtdegen H.,Pristovsek M.,Menhal H.,Zettler J.-T.,Richter W.,Schmitz D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. H. Hardtdegen, in: F. Ren, S.J. Pearton, S.N.G. Chu, R.J. Shul, W. Pletschen, T. Kamijoh (Eds.), Proc. 24th State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS) Los Angeles, CA, USA, 1996, Electrochem. Soc. Proc. 96 (2) (1996) 49.

2. (AlGa)As grown by low pressure metalorganic vapor phase epitaxy using a N2 carrier

3. Deep-level states in MOVPE AlGaAs:

4. Contributions to understanding the optical properties of partially ordered (Al0.3Ga0.7)0.52In0.48P

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