Contributions to understanding the optical properties of partially ordered (Al0.3Ga0.7)0.52In0.48P-Reference-Cited by-同舟云学术

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Contributions to understanding the optical properties of partially ordered (Al0.3Ga0.7)0.52In0.48P

Published:1998-12 Issue:1-4 Volume:195 Page:124-131
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Schmidt R.,Ahe M.v.d.,Dieker Ch.,Gauer D.,Hardtdegen H.,Hauck T.,Luysberg M.,Meertens D.,Schmitz D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Conduction Bands in In1−xAlxP

2. Compositional dependence of the luminescence ofIn0.49(AlyGa1−y)0.51P alloys near the direct–indirect band-gap crossover

3. Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD

4. (AlGa)As grown by low pressure metalorganic vapor phase epitaxy using a N2 carrier

5. Demonstration of the N2 carrier process for LP-MOVPE of

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Column III;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. Damage profiles and damage annealing behavior in Al0.168Ga0.348In0.484P/GaAs implanted with 200 keV Zn+ ions;Materials Science and Engineering: B;2001-10

3. In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere;Journal of Crystal Growth;1998-12

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