Carbon doping in GaAs using carbon tetrabromide in solid source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Iodine and carbon tetrabromide use in solid source molecular beam epitaxy
2. Effects of substrate orientation, temperature, and hole concentration on the bandgap energy of carbon-doped GaAs
3. Growth and characterization of carbon-doped low-temperature GaAs
4. Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors
5. Evolution of surface structure during carbon doping in the metal-organic vapor-phase epitaxial growth of GaAs
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1. The structural, electronic, optical, and mechanical properties of carbon-based halides: An ab initio DFT approach;AIP Advances;2024-03-01
2. Growth of silicon- and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors;Journal of Crystal Growth;2021-10
3. Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films;Surface and Coatings Technology;2018-06
4. AlGaAs/GaAs HBTs with C-doped base and undoped emitter-base spacer layer;Journal of Physics: Conference Series;2017-11
5. Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application;Semiconductor Science and Technology;2015-06-16
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