Arsenic incorporation in GaN during growth by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Arsenic incorporation in GaN during growth by molecular beam epitaxy

Published:2003-04 Issue:1-4 Volume:251 Page:510-514
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Foxon C.T.,Novikov S.V.,Li T.,Campion R.P.,Winser A.J.,Harrison I.,Kappers M.J.,Humphreys C.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Group III nitride semiconductors for short wavelength light-emitting devices

2. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

3. Electronic structure and phase stability ofGaAs1−xNxalloys

4. Deep electronic gap levels induced by isovalent P and As impurities in GaN

5. Arsenic impurities in GaN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters;Applied Physics Reviews;2020-12

2. Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy;Spectrochimica Acta Part B: Atomic Spectroscopy;2010-07

3. Strong below-band gap absorption of N-rich side GaNSb by metal-organic chemical vapor deposition;Journal of Materials Research;2009-12

4. Raman scattering study of undoped and As-doped GaN grown with different III/V ratios;Semiconductor Science and Technology;2007-09-07

5. Computational study of GaAs1−xNxand GaN1−yAsyalloys and arsenic impurities in GaN;Journal of Physics: Condensed Matter;2006-10-20

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