Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy

Published:2010-07 Issue:7 Volume:65 Page:583-586
ISSN:0584-8547
Container-title:Spectrochimica Acta Part B: Atomic Spectroscopy
language:en
Short-container-title:Spectrochimica Acta Part B: Atomic Spectroscopy

Author:

Queralt I.,Ibañez J.,Marguí E.,Pujol J.

Publisher

Elsevier BV

Subject

Spectroscopy,Instrumentation,Atomic and Molecular Physics, and Optics,Analytical Chemistry

Reference22 articles.

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2. International Standard ISO 3497 Norm, Metallic Coatings – Measurement of Coating Thickness – X-ray Spectrometric Methods, Third edition 2000-12-15, Geneva, Switzerland, (2000).

3. Determination of layer thickness with micro-XRF;Vogt;Appl. Surf. Sci.,2005

4. Thickness determination of thin polycrystalline film by grazing incidence X-ray diffraction;Lhotka;Surf. Coat. Technol.,2001

5. Investigations of thin layers by TEY, XRF, EPMA and XPS — a comparison of X-ray analytical methods;Ebel;Adv. X-ray Anal.,1999

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