Computational study of GaAs1−xNxand GaN1−yAsyalloys and arsenic impurities in GaN
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/18/i=44/a=009/pdf
Reference45 articles.
1. Band parameters for nitrogen-containing semiconductors
2. Band gaps of GaPN and GaAsN alloys
3. The growth and properties of group III nitrides
4. Bowing parameter of the band-gap energy of GaNxAs1−x
5. Electronic structure and phase stability ofGaAs1−xNxalloys
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