Shape evolution of InAs quantum dots during overgrowth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Observation of Reentrant 2D to 3D Morphology Transition in Highly Strained Epitaxy: InAs on GaAs
2. Structural characterization of (In,Ga)As quantum dots in a GaAs matrix
3. Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots
4. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
5. Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots
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