Growth of GaNAs films by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
2. Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy
3. GaNAs grown by gas source molecular beam epitaxy
4. Bowing parameter of the band-gap energy of GaNxAs1−x
5. Bandgap Energy of GaNAs Alloys Grown on (001) GaAs by Metalorganic Molecular Beam Epitaxy
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a ‐Plane Walls;Advanced Optical Materials;2020-12-23
2. The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy;Journal of Physics: Condensed Matter;2002-03-22
3. Microstructural characterization of GaN-GaAs alloys grown on (001) GaAs by molecular beam epitaxy;MRS Proceedings;2001
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