Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122535
Reference9 articles.
1. Gas source MBE growth of GaN rich side of GaN1 − P using ion-removed ECR radical cell
2. Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy
3. GaN-Rich Side of GaNAs Grown by Gas Source Molecular Beam Epitaxy
4. High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2× 2) and (4× 4) Reflection High Energy Electron Diffraction Patterns
5. Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy
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