Gas source MBE growth of GaN rich side of GaN1 − P using ion-removed ECR radical cell-Reference-Cited by-同舟云学术

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Gas source MBE growth of GaN rich side of GaN1 − P using ion-removed ECR radical cell

Published:1997-05 Issue: Volume:175-176 Page:150-155
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Iwata K.,Asahi H.,Asami K.,Gonda S.

Funder

Japan Society for the Promotion of Science

Murata Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide

3. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content

4. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers

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1. Bandgap engineering and modulation of thermodynamic, and optical properties of III-N monolayers XN (X = In, Ga & Al) by mutual alloying;Physica Scripta;2022-08-11

2. Density functional study on Ag8-xCuxI8 (0≤x≤8);Physica B: Condensed Matter;2021-03

3. Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters;Applied Physics Reviews;2020-12

4. First-Principle Study of the Optical Properties of Dilute-P GaN1−xPx Alloys;Scientific Reports;2018-04-16

5. First-Principle Electronic Properties of Dilute-P GaN1−xPx Alloy for Visible Light Emitters;Scientific Reports;2016-04-14

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