The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Reference36 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
2. Electronic structure and phase stability ofGaAs1−xNxalloys
3. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP
4. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys
5. P-P and As-As isovalent impurity pairs in GaN: Interaction of deept2levels
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1. Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials;Nature Communications;2018-05-15
2. Partially polycrystalline GaN1−xAsxalloys grown on GaAs in the middle composition range achieving a smaller band gap;Japanese Journal of Applied Physics;2017-07-11
3. Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy;Journal of Applied Physics;2016-09-28
4. Highly mismatched GaN1−xSbxalloys: synthesis, structure and electronic properties;Semiconductor Science and Technology;2016-06-28
5. Tellurium n-type doping of highly mismatched amorphous GaN1−As alloys in plasma-assisted molecular beam epitaxy;Journal of Crystal Growth;2014-10
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