1. Valence band hybridization inN-richGaN1−xAsxalloys
2. W. Walukiewicz, K. Alberi, J. Wu, W. Shan, K.M. Yu, J.W. Ager III, in: Physics of Dilute III–V Nitride Semiconductors and Material Systems: Physics and Technology, (Eds.) Ayse Erol (Springer-Verlag Berlin-Heidelberg 2008) Chapter 3.
3. Visible-light absorption and large band-gap bowing of GaN1−xSbxfrom first principles
4. The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy
5. S.V. Novikov, K.M. Yu, W.L. Sarney, Z. Liliental-Weber, M. Ting, R.E.L. Powell, M. Shaw, A.J. Kent, R.W. Martin, S.P. Svensson, W. Walukiewicz, C.T. Foxon, in: Proc.: 2013 Materials Research Society Fall Meeting, Boston, USA, December 1–6, 2013, 253.