Raman spectroscopy based measurements of carrier concentration in n-type GaN nanowires grown by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4963291
Reference44 articles.
1. GaN Nanowires Grown by Molecular Beam Epitaxy
2. Review of recent progress of III-nitride nanowire lasers
3. Determination of the charge carrier concentration and mobility in n-gap by Raman spectroscopy
4. Raman scattering of phonon-plasmon coupled modes in self-assembled GaN nanowires
5. Raman characterization of electronic properties of self-assembled GaN nanorods grown by plasma-assisted molecular-beam epitaxy
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